tcdt1100/ tcdt1100g document number 83535 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 1 17201_1 65 4 2 3 1 nc c e a (+) c (?) nc v de pb p b -free e3 optocoupler, phototransistor output features isolation test voltage 3750 v rms extra low coupling capacity - typical 0.2 pf high common mode rejection no base terminal connection for improved noise immunity ctr offered in 4 groups thickness through insulation > 0.75 mm creepage current resist ance according to vde 0303/iec 60112 c omparative t racking i ndex: cti = 275 lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e76222 system code a, double protection bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending fimko applications switch-mode power supplies line receiver computer peripheral interface microprocessor system interface circuits for safe protective separation against electri- cal shock according to safety class ii (reinforced iso- lation): for appl. class i - iv at mains voltage 300 v for appl. class i - iii at mains voltage 600 v accord- ing to din en 60747-5-2(vde0884)/ din en 60747- 5-5 pending, table 2. description the tcdt1100/ tcdt1100g series consists of a phototransisto r optically coupled to a gallium arsenide infrared-emitting diode in a 6-pin plastic dual inline package. the base of the phototransistor is not con- nected providing noise immunity. the elements are mounted on one leadframe which provides a fixed distance between input and output for highest safety requirements. vde standards these couplers perform safety functions according to the following equipment standards: din en 60747-5-2(vde0884)/ din en 60747-5-5 pending optocoupler for electrical safety requirements iec 60950/en 60950 office machines (applied for rein forced isolation for mains voltage 400 vrms) vde 0804 telecommunication apparatus and data processing iec 60065 safety for mains-operated electronic and related household appa- ratus order information g = leadform 10.16 mm; g is not marked on the body part remarks tcdt1100 ctr > 40 %, dip-6 tcdt1101 ctr 40 - 80 %, dip-6 tcdt1102 ctr 63 - 125 %, dip-6 tcdt1103 ctr 100 - 200 %, dip-6 tcdt1100g ctr > 40 %, dip-6 TCDT1101G ctr 40 - 80 %, dip-6 tcdt1102g ctr 63 - 125 %, dip-6 tcdt1103g ctr 100 - 200 %, dip-6
www.vishay.com 2 document number 83535 rev. 1.6, 26-oct-04 tcdt1100/ tcdt1100g vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output parameter test condition symbol value unit reverse voltage v r 5v forward current i f 60 ma forward surge current t p 10 si fsm 3a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector emitter voltage v ceo 32 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c parameter test condition symbol value unit isolation test voltage (rms) v iso 3750 v rms total power dissipation p tot 250 mw ambient temperature range t amb - 55 to + 100 c storage temperature range t stg - 55 to + 125 c soldering temperature 2 mm from case t 10 s t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit collector emitter voltage i c = 1 ma v ceo 32 v emitter collector voltage i e = 100 av eco 7v collector-emitter cut-off current v ce = 20 v, i f = 0, e = 0 i ceo 200 na
tcdt1100/ tcdt1100g document number 83535 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler current transfer ratio maximum safety ratings (according to din en 60747-5-2(vde0884)/ din en 60747-5-5 pending) see figure 1 this optocoupler is suitable for safe electric al isolation only within the safety ratings. compliance with the safety ratings shall be ens ured by means of suitable protective circuits. input output coupler insulation rated parameters parameter test condition symbol min ty p. max unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 ? f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf parameter test condition part symbol min ty p. max unit i c /i f v ce = 5 v, i f = 10 ma tcdt1100 tcdt1100g ctr 40 % tcdt1101 TCDT1101G ctr 40 80 % tcdt1102 tcdt1102g ctr 63 125 % tcdt1103 tcdt1103g ctr 100 200 % parameter test condition symbol min ty p. max unit forward current i f 130 ma parameter test condition symbol min ty p. max unit power dissipation p diss 265 mw parameter test condition symbol min ty p. max unit rated impulse voltage v iotm 6kv safety temperature t si 150 c parameter test condition symbol min ty p. max unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v iotm 6kv v pd 1.3 kv
www.vishay.com 4 document number 83535 rev. 1.6, 26-oct-04 tcdt1100/ tcdt1100g vishay semiconductors insulation resistance v io = 500 v r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? v io = 500 v, t amb = 150 c (construction test only) r io 10 9 ? parameter test condition symbol min ty p. max unit figure 1. derating diagram 0 25 50 75 125 0 50 100 150 200 300 p ? total power dissipation ( mw ) tot t si ? safety temperature ( c ) 150 94 9182 100 250 phototransistor psi ( mw ) ir-diode isi ( ma ) figure 2. test pulse diagram for sample test according to din en 60747-5-2(vde0884)/ din en 60747-; iec60747 t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
tcdt1100/ tcdt1100g document number 83535 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 5 switching characteristics parameter test condition symbol min ty p. max unit delay time v s = 5 v, i c = 5 ma, r l = 100 ? (see figure 3) t d 4.0 s rise time v s = 5 v, i c = 5 ma, r l = 100 ? (see figure 3) t r 7.0 s fall time v s = 5 v, i c = 5 ma, r l = 100 ? (see figure 3) t f 6.7 s storage time v s = 5 v, i c = 5 ma, r l = 100 ? (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 5 ma, r l = 100 ? (see figure 3) t on 11.0 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 ? (see figure 3) t off 7.0 s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k ? (see figure 4) t on 25.0 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k ? (see figure 4) t off 42.5 s figure 3. test circuit, non-saturated operation figure 4. test circuit, saturated operation channel i channel ii 95 10900 r g = 50 t p t p = 50 p s t = 0.01 + 5 v i c = 5 ma; adjusted through input amplitude i f 0 i f 50 100 oscilloscope r l t 1 m c l d 20 pf channel i channel ii 95 10843 r g =50 ? t p t p =50 s t = 0.01 +5v i c i f 0 50 1k i f =10ma oscilloscope r l c l 20 pf ? m 1 ? ? t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d +t r ) turn-on time t s storage time t f fall time t off (= t s +t f ) turn-of f time
www.vishay.com 6 document number 83535 rev. 1.6, 26-oct-04 tcdt1100/ tcdt1100g vishay semiconductors typical characteri stics (tamb = 25 c unless otherwise specified) figure 6. total power dissipati on vs. ambient temperature figure 7. forward current vs. forward voltage figure 8. relative current transfer ratio vs. ambient temperature 0 50 100 150 200 250 300 0 40 80 120 p Ctotal power dissipation ( mw ) t amb C ambient t emperature( c ) 96 11700 tot coupled device phototransistor ir-diode 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - forward voltag e(v) 96 11862 f i - forward current ( ma ) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30 - 20 - 1 0 0 10 20 30 40 50 60 70 80 t amb - ambient temperature ( c) 96 11920 ctr - relative current transfer ratio rel v ce =5v i f =10 ma figure 9. collector dark current vs. ambient temperature figure 10. collector current vs . collector emitter voltage figure 11. collector emitter sa turation voltage vs. collector current 0255075 1 10 100 1000 10000 i - collector dark current, ceo t amb - ambient temperature ( c) 100 95 11026 with open base ( na ) v ce =20v i f =0 0.1 1 10 0.1 1 10 100 v ce - collector emitter voltag e(v) 100 95 11054 i - collector current ( ma ) c 5ma 2ma 1ma i f = 50ma 20 ma 10 ma 110 0 0.2 0.4 0.6 0.8 1.0 v - collector emitter saturation voltage (v) cesat i c - collector current ( ma ) 100 95 11055 ctr = 50% 20% 10%
tcdt1100/ tcdt1100g document number 83535 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 7 figure 12. current transfer ratio vs. forward current figure 13. turn on / off time vs. forward current figure 14. turn on / off time vs. collector current 0.1 1 10 1 10 100 1000 ctr - current transfer ratio ( % ) i f - forward current ( ma ) 100 95 11057 v ce =5v 0 5 10 15 0 10 20 30 40 50 i f - forward current ( ma ) 20 95 11017 t / t - turn on / turn off time ( s) off on saturated operation v s =5v r l =1k ? t off t on 02 46 i c - collector current ( ma ) 10 95 11016 non saturated operation v s =5v r l ? t off t on 0 5 10 15 20 8 t / t - turn on / turn off time ( s) off on = 100 figure 15.arkingeample v v xxxy 68 d e vishay logo date code (year, week) package code plant code product code customer code/ identification/ option 17936 vde logo ul logo
www.vishay.com 8 document number 83535 rev. 1.6, 26-oct-04 tcdt1100/ tcdt1100g vishay semiconductors package dimensions in mm package dimensions in mm 14770 14771
tcdt1100/ tcdt1100g document number 83535 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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